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New Facility Expands ROHM's SiC Power Devices Production

ROHM Co., Ltd. has announced plans to construct a new building at its Apollo plant in Chikugo, Japan. The plan aims to expand the company's production capacity for SiC power devices and meet the market's rising demand.

The envisioned three-story facility will encompass 11,000sq.m floor area, the construction of which is expected to start in 2019 and conclude in 2020. ROHM has been producing SiC power devices, such as SiC Schottky barrier diodes and MOSFETs), since 2010. It was also the first supplier to begin production of full SiC power modules and SiC trench MOSFETs, and continues to develop industry-leading technologies up until now.

A rendering of new factory building of ROHM APOLLO Co., Ltd.
A rendering of new factory building of ROHM APOLLO Co., Ltd.

The new building will significantly boost ROHM's production capacity of SiC devices (expected to be key to improving energy conservation), to meet the need for increased energy saving measures on a global scale. Going forward, the ROHM Group will continue to ensure stable product supply by quickly understanding market conditions and strengthening production capacity while implementing multi-site production, inventory control, and disaster prevention activities.